FRIDAY 12:00
MODERN CMOS TECHNOLOGY: NEW APPLICATIONS AND CHALLENGE FOR THE NEXT DECADES
Lionel Trojman
Universidad San Francisco de Quito, Ecuador
ABSTRACT
CMOS technology is the basis of most of electronic systems. Indeed in the last decades the MOSFET have seen his architecture radically changing. In the last decade, the conventional planar gate (2D perspective) became a 3-D (FinFET devices). Also the materials used for the gate are no more exclusively made of Si material but are made of metal-oxide (high-k material like HfO2) capped with metal-nitrid like TiN. Finally the channel can be also made of Ge or more generally III-V materials or ally.
Thanks to this structural evolution, the physics behind the CMOS processing enables also sensor fabrications and high-power device (GaN devices) making the CMOS not only the smallest devices of any commercialized technology (14nm today and 7nm coming soon) but also the most useful one in the market. In this presentation we will talk about the different technological versions of the CMOS but also this fabrication process and the challenges for the next decades. We will emphasize on the physical description of the modern MOSFET (architecture and material) along with a brief explanation on the fabrication details. We will also explain how the CMOS is the core of the sensors devices and how it will change the high-power application in the coming years